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DMG1029SV-7 Технические параметры

Diodes Incorporated  DMG1029SV-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6Pins
Weight 3.005049mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 500mA 360mA
Number of Elements 2 Elements
Turn Off Delay Time 10.6 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 4Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY, LOW THRESHOLD
Max Power Dissipation 450mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMG1029
Свойство продукта Значение свойства
Pin Count 6
Operating Mode ENHANCEMENT MODE
Power Dissipation 450mW
Turn On Delay Time 5.5 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.7 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 0.3nC @ 4.5V
Rise Time 7.9ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 11.6 ns
Continuous Drain Current (ID) 500mA
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.37A
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 5 pF
Height 600μm
Length 1.7mm
Width 1.25mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

DMG1029SV-7 Документы

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