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Diodes Incorporated DMG10N60SCT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 6 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Current - Continuous Drain (Id) @ 25℃ | 12A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 178W Tc | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Matte Tin (Sn) | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 750m Ω @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1587pF @ 16V | |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V | |
| Drain to Source Voltage (Vdss) | 600V | |
| Vgs (Max) | ±30V | |
| RoHS Status | ROHS3 Compliant |