[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

DMG4N65CTI Технические параметры

Diodes Incorporated  DMG4N65CTI technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 8 Weeks
Package / Case TO-220-3 Full Pack, Isolated Tab
Mounting Type Through Hole
Mount Through Hole
Number of Pins 3Pins
Weight 2.299997g
Transistor Element Material SILICON
Power Dissipation (Max) 8.35W Ta
Turn Off Delay Time 40 ns
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 4A Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Terminal Position SINGLE
Pin Count 3
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 15.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 10V
Rise Time 13.8ns
Vgs (Max) ±30V
Fall Time (Typ) 16 ns
Continuous Drain Current (ID) 4A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 3Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 6A
Avalanche Energy Rating (Eas) 456 mJ
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Просмотр сходства

DMG4N65CTI Документы

DMG4N65CTI brand manufacturers: Diodes Incorporated, Anli stock, DMG4N65CTI reference price.Diodes Incorporated. DMG4N65CTI parameters, DMG4N65CTI Datasheet PDF and pin diagram description download.You can use the DMG4N65CTI Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find DMG4N65CTI pin diagram and circuit diagram and usage method of function,DMG4N65CTI electronics tutorials.You can download from the Anli.