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DMG5802LFX-7 Технические параметры

Diodes Incorporated  DMG5802LFX-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 16 Weeks
Package / Case 6-VFDFN Exposed Pad
Mount Surface Mount
Mounting Type Surface Mount
Number of Pins 6Pins
Transistor Element Material SILICON
Turn Off Delay Time 32.18 ns
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 980mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 980mW
Turn On Delay Time 3.69 ns
FET Type 2 N-Channel (Dual) Common Drain
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1066.4pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 31.3nC @ 10V
Rise Time 13.43ns
Drain to Source Voltage (Vdss) 24V
Fall Time (Typ) 22.45 ns
Continuous Drain Current (ID) 6.5A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.015Ohm
Drain to Source Breakdown Voltage 24V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Width 2.1mm
Length 5.1mm
Height 800μm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

DMG5802LFX-7 Документы

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