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DMG6601LVT-7 Технические параметры

Diodes Incorporated  DMG6601LVT-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 15 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 26Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.8A 2.5A
Number of Elements 2 Elements
Turn Off Delay Time 18.3 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 850mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number DMG6601
Свойство продукта Значение свойства
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G6
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Power Dissipation 850mW
Turn On Delay Time 1.7 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 422pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 10V
Rise Time 4.6ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 2.2 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 3.8A
Drain-source On Resistance-Max 0.055Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1mm
Length 2.9mm
Width 1.6mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

DMG6601LVT-7 Документы

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