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Diodes Incorporated DMG6601LVT-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 15 Weeks | |
| Contact Plating | Gold | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Number of Pins | 26Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 3.8A 2.5A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 18.3 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2009 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | HIGH RELIABILITY | |
| Max Power Dissipation | 850mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | DMG6601 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-G6 | |
| Number of Channels | 2Channels | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 850mW | |
| Turn On Delay Time | 1.7 ns | |
| FET Type | N and P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 55m Ω @ 3.4A, 10V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 422pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 12.3nC @ 10V | |
| Rise Time | 4.6ns | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Fall Time (Typ) | 2.2 ns | |
| Continuous Drain Current (ID) | 2.5A | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain Current-Max (Abs) (ID) | 3.8A | |
| Drain-source On Resistance-Max | 0.055Ohm | |
| Drain to Source Breakdown Voltage | 30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Logic Level Gate | |
| Height | 1mm | |
| Length | 2.9mm | |
| Width | 1.6mm | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |