[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

DMG6602SVT-7 Технические параметры

Diodes Incorporated  DMG6602SVT-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.4A 2.8A
Number of Elements 2 Elements
Turn Off Delay Time 13 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 95mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 840mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMG6602
Свойство продукта Значение свойства
Pin Count 6
Operating Mode ENHANCEMENT MODE
Power Dissipation 840mW
Turn On Delay Time 3 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 5ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 2.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.4A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 13A
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate, 4.5V Drive
Height 1mm
Length 2.9mm
Width 1.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

DMG6602SVT-7 Документы

DMG6602SVT-7 brand manufacturers: Diodes Incorporated, Anli stock, DMG6602SVT-7 reference price.Diodes Incorporated. DMG6602SVT-7 parameters, DMG6602SVT-7 Datasheet PDF and pin diagram description download.You can use the DMG6602SVT-7 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find DMG6602SVT-7 pin diagram and circuit diagram and usage method of function,DMG6602SVT-7 electronics tutorials.You can download from the Anli.