Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
DMG8601UFG-7 Технические параметры
Diodes Incorporated DMG8601UFG-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Contact Plating | Gold | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerUDFN | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 562 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Cut Tape (CT) | |
| Published | 2011 | |
| JESD-609 Code | e4 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Max Power Dissipation | 920mW | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | DMG8601UFG | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-N5 | |
| Qualification Status | Not Qualified | |
| Number of Channels | 2Channels | |
| Operating Mode | ENHANCEMENT MODE | |
| Turn On Delay Time | 53 ns | |
| FET Type | 2 N-Channel (Dual) Common Drain | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 6.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.05V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 143pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 4.5V | |
| Rise Time | 78ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 234 ns | |
| Continuous Drain Current (ID) | 6.1A | |
| Gate to Source Voltage (Vgs) | 12V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
DMG8601UFG-7 Документы
- Environmental InformationDiodes RoHS 3 Cert
- DatasheetsDMG8601UFG
- PCN Design/SpecificationBond Wire 11/Nov/2011
- PCN Assembly/OriginMult Dev Assembly Chgs 15/May/2019 Mult Dev Wafer Chgs 4/Oct/2019
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ