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DMG9933USD-13 Технические параметры

Diodes Incorporated  DMG9933USD-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 73.992255mg
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 46.52 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.15W
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12.45 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 608.4pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Rise Time 10.29ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 22.19 ns
Continuous Drain Current (ID) 4.6A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.075Ohm
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

DMG9933USD-13 Документы

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