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DMHC3025LSD-13 Технические параметры

Diodes Incorporated  DMHC3025LSD-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 18 Weeks
Contact Plating Tin
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 8Pins
Weight 73.992255mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6A 4.2A
Turn Off Delay Time 28.2 ns
Number of Elements 4 Elements
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.5W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMHC3025LSD
Reference Standard AEC-Q101
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 7.5 ns
FET Type 2 N and 2 P-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 11.7nC @ 10V
Rise Time 4.9ns
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 13.5 ns
Continuous Drain Current (ID) 4.2A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 60A
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.7mm
Length 4.95mm
Width 3.95mm
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Lead Free Lead Free

DMHC3025LSD-13 Документы

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