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DMHC3025LSDQ-13 Технические параметры
Diodes Incorporated DMHC3025LSDQ-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 23 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Current - Continuous Drain (Id) @ 25℃ | 6A 4.2A | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2013 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Max Power Dissipation | 1.5W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| FET Type | 2 N and 2 P-Channel (H-Bridge) | |
| Rds On (Max) @ Id, Vgs | 25m Ω @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 11.7nC @ 10V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (ID) | 4.2A | |
| FET Feature | Standard | |
| RoHS Status | ROHS3 Compliant |
DMHC3025LSDQ-13 Документы
- Environmental InformationDiodes RoHS 3 Cert
- DatasheetsDMHC3025LSDQ-13~
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