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DMN10H099SFG-13 Технические параметры
Diodes Incorporated DMN10H099SFG-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 23 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Number of Pins | 8Pins | |
| Weight | 72.007789mg | |
| Current - Continuous Drain (Id) @ 25℃ | 4.2A Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V 10V | |
| Power Dissipation (Max) | 980mW Ta | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| JESD-609 Code | e3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Capacitance | 1.127nF | |
| Number of Channels | 1Channel | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 80m Ω @ 3.3A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1172pF @ 50V | |
| Gate Charge (Qg) (Max) @ Vgs | 25.2nC @ 10V | |
| Vgs (Max) | ±20V | |
| Continuous Drain Current (ID) | 4.2A | |
| Drain to Source Breakdown Voltage | 100V | |
| RoHS Status | ROHS3 Compliant |
DMN10H099SFG-13 Документы
- Environmental InformationDiodes RoHS 3 Cert
- DatasheetsDMN10H099SFG
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