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DMN2008LFU-13 Технические параметры

Diodes Incorporated  DMN2008LFU-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Max Power Dissipation 1W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N6
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.4m Ω @ 5.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1418pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 42.3nC @ 10V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 14.5A
Drain-source On Resistance-Max 0.0096Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
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DMN2008LFU-13 Документы

DMN2008LFU-13 brand manufacturers: Diodes Incorporated, Anli stock, DMN2008LFU-13 reference price.Diodes Incorporated. DMN2008LFU-13 parameters, DMN2008LFU-13 Datasheet PDF and pin diagram description download.You can use the DMN2008LFU-13 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find DMN2008LFU-13 pin diagram and circuit diagram and usage method of function,DMN2008LFU-13 electronics tutorials.You can download from the Anli.