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DMN2016LHAB-7 Технические параметры

Diodes Incorporated  DMN2016LHAB-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Number of Pins 6Pins
Supplier Device Package U-DFN2030-6
Current - Continuous Drain (Id) @ 25℃ 7.5A
Turn Off Delay Time 40.9 ns
Published 2013
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.2W
Number of Channels 2Channels
Element Configuration Dual
Turn On Delay Time 6.9 ns
Power - Max 1.2W
Свойство продукта Значение свойства
FET Type 2 N-Channel (Dual) Common Drain
Rds On (Max) @ Id, Vgs 15.5mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Rise Time 15.5ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 7.5A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 1.55nF
FET Feature Logic Level Gate
Drain to Source Resistance 30mOhm
Rds On Max 15.5 mΩ
Height 600μm
Length 2.05mm
Width 3.05mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
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DMN2016LHAB-7 Документы

DMN2016LHAB-7 brand manufacturers: Diodes Incorporated, Anli stock, DMN2016LHAB-7 reference price.Diodes Incorporated. DMN2016LHAB-7 parameters, DMN2016LHAB-7 Datasheet PDF and pin diagram description download.You can use the DMN2016LHAB-7 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find DMN2016LHAB-7 pin diagram and circuit diagram and usage method of function,DMN2016LHAB-7 electronics tutorials.You can download from the Anli.