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DMN2016UTS-13 Технические параметры

Diodes Incorporated  DMN2016UTS-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8Pins
Weight 157.991892mg
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 59.38 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 14.5mOhm
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 880mW
Terminal Form GULL WING
Base Part Number DMN2016U
Pin Count 8
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 880mW
Turn On Delay Time 10.39 ns
FET Type 2 N-Channel (Dual) Common Drain
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.5m Ω @ 9.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1495pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 4.5V
Rise Time 11.66ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 16.27 ns
Continuous Drain Current (ID) 8.58A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.025mm
Length 4.5mm
Width 3.1mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

DMN2016UTS-13 Документы

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