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Diodes Incorporated DMN2019UTS-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-TSSOP (0.173, 4.40mm Width) | |
| Number of Pins | 8Pins | |
| Weight | 157.991892mg | |
| Turn Off Delay Time | 562 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2009 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Resistance | 18.5mOhm | |
| Terminal Finish | Matte Tin (Sn) | |
| Max Power Dissipation | 780mW | |
| Base Part Number | DMN2019 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Channels | 2Channels | |
| Element Configuration | Dual | |
| Turn On Delay Time | 53 ns | |
| FET Type | 2 N-Channel (Dual) Common Drain | |
| Rds On (Max) @ Id, Vgs | 18.5m Ω @ 7A, 10V | |
| Vgs(th) (Max) @ Id | 950mV @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 143pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 4.5V | |
| Rise Time | 78ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 234 ns | |
| Continuous Drain Current (ID) | 5.4A | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain to Source Breakdown Voltage | 20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |