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DMN2029USD-13 Технические параметры

Diodes Incorporated  DMN2029USD-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 23 Weeks
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 8Pins
Transistor Element Material SILICON
Turn Off Delay Time 119.3 ns
Number of Elements 2 Elements
Published 2013
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Reference Standard AEC-Q101
Свойство продукта Значение свойства
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 16.5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1171pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 18.6nC @ 8V
Rise Time 33.3ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 53.5 ns
Continuous Drain Current (ID) 5.8A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.025Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Width 3.95mm
Length 4.95mm
Height 1.5mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC

DMN2029USD-13 Документы

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