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DMN3025LFG-13 Технические параметры

Diodes Incorporated  DMN3025LFG-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 17 Weeks
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 7.5A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Turn Off Delay Time 17.9 ns
Power Dissipation (Max) 2W Ta
Number of Elements 1 Element
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Terminal Position DUAL
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Reference Standard AEC-Q101
JESD-30 Code S-PDSO-N5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 3.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 605pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 10V
Rise Time 4.1ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Fall Time (Typ) 4.7 ns
Continuous Drain Current (ID) 7.5A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC

DMN3025LFG-13 Документы

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