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DMN3032LFDBWQ-13 Технические параметры
Diodes Incorporated DMN3032LFDBWQ-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 6-UDFN Exposed Pad | |
| Supplier Device Package | U-DFN2020-6 (SWP) Type B | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 5.5A (Ta) | |
| Package | Tape & Reel (TR) | |
| Mfr | Diodes Incorporated | |
| MSL | - | |
| Qualification | AEC-Q101 | |
| Transistor Polarity | N Channel | |
| Continuous Drain Current Id | 5.5A | |
| Factory Pack QuantityFactory Pack Quantity | 10000 | |
| Manufacturer | Diodes Incorporated | |
| Brand | Diodes Incorporated |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | Automotive, AEC-Q101 | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Power - Max | 820mW | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5.8A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 10.6nC @ 10V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Product Type | MOSFET | |
| Channel Type | N Channel | |
| FET Feature | Standard | |
| Product Category | MOSFET |
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