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DMN3033LSDQ-13 Технические параметры

Diodes Incorporated  DMN3033LSDQ-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 7 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 6.9A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 725pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 6.9A
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 30A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
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DMN3033LSDQ-13 Документы

DMN3033LSDQ-13 brand manufacturers: Diodes Incorporated, Anli stock, DMN3033LSDQ-13 reference price.Diodes Incorporated. DMN3033LSDQ-13 parameters, DMN3033LSDQ-13 Datasheet PDF and pin diagram description download.You can use the DMN3033LSDQ-13 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find DMN3033LSDQ-13 pin diagram and circuit diagram and usage method of function,DMN3033LSDQ-13 electronics tutorials.You can download from the Anli.