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DMN3135LVT-7 Технические параметры

Diodes Incorporated  DMN3135LVT-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6Pins
Transistor Element Material SILICON
Number of Elements 1 Element
Turn Off Delay Time 13.1 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 840mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Pin Count 6
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 2.6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 60m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 305pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 4.5V
Rise Time 4.6ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 2.5 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3.3A
Drain-source On Resistance-Max 0.047Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

DMN3135LVT-7 Документы

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