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DMN3190LDW-7 Технические параметры

Diodes Incorporated  DMN3190LDW-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Weight 6.010099mg
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 30.3 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 320mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Pin Count 6
Reference Standard AEC-Q101
Свойство продукта Значение свойства
Number of Channels 2Channels
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 4.5 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 1.3A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 87pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 2nC @ 10V
Rise Time 8.9ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 15.6 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1A
Drain-source On Resistance-Max 0.19Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

DMN3190LDW-7 Документы

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