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DMN3190LDWQ-7 Технические параметры

Diodes Incorporated  DMN3190LDWQ-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Mfr Diodes Incorporated
Package Tape & Reel (TR)
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 1A (Ta)
Number of Elements per Chip 1
Package Type SOT-363
Channel Mode Enhancement
MSL -
Qualification AEC-Q101
Transistor Polarity N Channel
Continuous Drain Current Id 1A
Vds - Drain-Source Breakdown Voltage 30 V
Vgs th - Gate-Source Threshold Voltage 1.5 V
Pd - Power Dissipation 400 mW
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Свойство продукта Значение свойства
Manufacturer Diodes Incorporated
Brand Diodes Incorporated
Qg - Gate Charge 2 nC
Rds On - Drain-Source Resistance 190 mOhms
Id - Continuous Drain Current 1 A
Series Automotive, AEC-Q101
Operating Temperature -55°C ~ 150°C (TJ)
Packaging MouseReel
Subcategory MOSFETs
Technology Si
Pin Count 6
Number of Channels 2 ChannelChannel
Power - Max 320mW (Ta)
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 190mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 87pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 2nC @ 10V
Drain to Source Voltage (Vdss) 30V
Product Type MOSFET
Channel Type N
FET Feature Standard
Product Category MOSFET
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