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DMN601VKQ-7 Технические параметры
Diodes Incorporated DMN601VKQ-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Operating Temperature | -65°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2016 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Max Power Dissipation | 250mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Number of Channels | 2Channels | |
| Power Dissipation | 250mW | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 2 Ω @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V | |
| Drain to Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (ID) | 305mA | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 60V | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Standard | |
| Height | 600μm | |
| RoHS Status | ROHS3 Compliant |
DMN601VKQ-7 Документы
- Environmental InformationDiodes RoHS 3 Cert
- DatasheetsDMN601VKQ
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