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DMN6066SSD-13 Технические параметры

Diodes Incorporated  DMN6066SSD-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 73.992255mg
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 14.7 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 66mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.8W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMN6066SSD
Свойство продукта Значение свойства
Pin Count 8
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.14W
Turn On Delay Time 2.7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 66m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 502pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 10.3nC @ 10V
Rise Time 2.4ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 5.4 ns
Continuous Drain Current (ID) 3.3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.4A
DS Breakdown Voltage-Min 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 5mm
Width 4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

DMN6066SSD-13 Документы

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