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DMN61D9UDW-7 Технические параметры

Diodes Incorporated  DMN61D9UDW-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 320mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 320mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 28.5pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V
Drain to Source Voltage (Vdss) 60V
Continuous Drain Current (ID) 350mA
Drain Current-Max (Abs) (ID) 0.35A
Drain-source On Resistance-Max 3.5Ohm
DS Breakdown Voltage-Min 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant
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DMN61D9UDW-7 Документы

DMN61D9UDW-7 brand manufacturers: Diodes Incorporated, Anli stock, DMN61D9UDW-7 reference price.Diodes Incorporated. DMN61D9UDW-7 parameters, DMN61D9UDW-7 Datasheet PDF and pin diagram description download.You can use the DMN61D9UDW-7 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find DMN61D9UDW-7 pin diagram and circuit diagram and usage method of function,DMN61D9UDW-7 electronics tutorials.You can download from the Anli.