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Diodes Incorporated DMN63D8LW-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Factory Lead Time | 14 Weeks | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | SC-70, SOT-323 | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 380mA Ta | |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V 10V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 300mW Ta | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Published | 2015 | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Matte Tin (Sn) | |
Additional Feature | HIGH RELIABILITY |
Свойство продукта | Значение свойства | |
---|---|---|
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Reference Standard | AEC-Q101 | |
JESD-30 Code | R-PDSO-G3 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 2.8 Ω @ 250mA, 10V | |
Vgs(th) (Max) @ Id | 1.5V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 23.2pF @ 25V | |
Gate Charge (Qg) (Max) @ Vgs | 0.9nC @ 10V | |
Drain to Source Voltage (Vdss) | 30V | |
Vgs (Max) | ±20V | |
Continuous Drain Current (ID) | 380mA | |
Drain Current-Max (Abs) (ID) | 0.38A | |
Drain-source On Resistance-Max | 4.5Ohm | |
DS Breakdown Voltage-Min | 30V | |
RoHS Status | ROHS3 Compliant |