[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

DMN65D8LDW-7 Технические параметры

Diodes Incorporated  DMN65D8LDW-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Contact Plating Tin
Number of Pins 6Pins
Weight 6.010099mg
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 12 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 6Ohm
Additional Feature HIGH RELIABILITY
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMN65D8LDW
Свойство продукта Значение свойства
Pin Count 6
Operating Mode ENHANCEMENT MODE
Power Dissipation 300mW
Turn On Delay Time 3.3 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 115mA, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 0.87nC @ 10V
Rise Time 3.2ns
Drain to Source Voltage (Vdss) 60V
Fall Time (Typ) 6.3 ns
Continuous Drain Current (ID) 180mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.15A
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

DMN65D8LDW-7 Документы

DMN65D8LDW-7 brand manufacturers: Diodes Incorporated, Anli stock, DMN65D8LDW-7 reference price.Diodes Incorporated. DMN65D8LDW-7 parameters, DMN65D8LDW-7 Datasheet PDF and pin diagram description download.You can use the DMN65D8LDW-7 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find DMN65D8LDW-7 pin diagram and circuit diagram and usage method of function,DMN65D8LDW-7 electronics tutorials.You can download from the Anli.