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DMN66D0LDWQ-13 Технические параметры

Diodes Incorporated  DMN66D0LDWQ-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Mfr Diodes Incorporated
Package Tape & Reel (TR)
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 217mA (Ta)
Vds - Drain-Source Breakdown Voltage 60 V
Vgs th - Gate-Source Threshold Voltage 2 V
Pd - Power Dissipation 400 mW
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 10000
Mounting Styles SMD/SMT
Channel Mode Enhancement
Manufacturer Diodes Incorporated
Brand Diodes Incorporated
Свойство продукта Значение свойства
Qg - Gate Charge 900 pC
Rds On - Drain-Source Resistance 5 Ohms
RoHS Details
Id - Continuous Drain Current 217 mA
Series Automotive, AEC-Q101
Operating Temperature -55°C ~ 150°C (TJ)
Packaging MouseReel
Subcategory MOSFETs
Technology Si
Number of Channels 2 ChannelChannel
Power - Max 400mW (Ta)
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 6Ohm @ 115mA, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 29.3pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 10V
Drain to Source Voltage (Vdss) 60V
Product Type MOSFET
FET Feature Standard
Product MOSFET
Product Category MOSFET
Просмотр сходства
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