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Diodes Incorporated DMP3056LSSQ-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO | |
| Mfr | Diodes Incorporated | |
| Package | Tape & Reel (TR) | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 4.9A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Power Dissipation (Max) | 1.2W (Ta) | |
| Continuous Drain Current Id | 4.9 | |
| MSL | MSL 1 - Unlimited | |
| Qualification | AEC-Q101 | |
| Vds - Drain-Source Breakdown Voltage | 30 V | |
| Typical Turn-On Delay Time | 4.7 ns | |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V | |
| Pd - Power Dissipation | 1.2 W | |
| Transistor Polarity | P-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Unit Weight | 0.026455 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 2500 | |
| Mounting Styles | SMD/SMT | |
| Channel Mode | Enhancement | |
| Manufacturer | Diodes Incorporated |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Brand | Diodes Incorporated | |
| Qg - Gate Charge | 17.3 nC | |
| Rds On - Drain-Source Resistance | 45 mOhms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 43 ns | |
| Id - Continuous Drain Current | 4.9 A | |
| Series | Automotive, AEC-Q101 | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Packaging | Cut Tape | |
| Subcategory | MOSFETs | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Power Dissipation | 1.6 | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 6A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 969 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 17.3 nC @ 10 V | |
| Rise Time | 5 ns | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Vgs (Max) | ±20V | |
| Product Type | MOSFET | |
| Transistor Type | 1 P-Channel | |
| Channel Type | P Channel | |
| FET Feature | - | |
| Product Category | MOSFET |