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DMP3056LSSQ-13 Технические параметры

Diodes Incorporated  DMP3056LSSQ-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Mfr Diodes Incorporated
Package Tape & Reel (TR)
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Power Dissipation (Max) 1.2W (Ta)
Continuous Drain Current Id 4.9
MSL MSL 1 - Unlimited
Qualification AEC-Q101
Vds - Drain-Source Breakdown Voltage 30 V
Typical Turn-On Delay Time 4.7 ns
Vgs th - Gate-Source Threshold Voltage 2.1 V
Pd - Power Dissipation 1.2 W
Transistor Polarity P-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Unit Weight 0.026455 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 2500
Mounting Styles SMD/SMT
Channel Mode Enhancement
Manufacturer Diodes Incorporated
Свойство продукта Значение свойства
Brand Diodes Incorporated
Qg - Gate Charge 17.3 nC
Rds On - Drain-Source Resistance 45 mOhms
RoHS Details
Typical Turn-Off Delay Time 43 ns
Id - Continuous Drain Current 4.9 A
Series Automotive, AEC-Q101
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Cut Tape
Subcategory MOSFETs
Configuration Single
Number of Channels 1 ChannelChannel
Power Dissipation 1.6
FET Type P-Channel
Rds On (Max) @ Id, Vgs 45mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 969 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 17.3 nC @ 10 V
Rise Time 5 ns
Drain to Source Voltage (Vdss) 30 V
Vgs (Max) ±20V
Product Type MOSFET
Transistor Type 1 P-Channel
Channel Type P Channel
FET Feature -
Product Category MOSFET
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