Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
DMT3009LDT-7 Технические параметры
Diodes Incorporated DMT3009LDT-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 23 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-VDFN Exposed Pad | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2015 | |
| JESD-609 Code | e4 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Max Power Dissipation | 1.2W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Power - Max | 1.2W | |
| FET Type | 2 N-Channel (Dual) Asymmetrical | |
| Rds On (Max) @ Id, Vgs | 11.1m Ω @ 14.4A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 15V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (ID) | 30A | |
| FET Feature | Standard | |
| RoHS Status | ROHS3 Compliant |
DMT3009LDT-7 Документы
- Environmental InformationDiodes RoHS 3 Cert
- DatasheetsDMT3009LDT
- PCN Assembly/OriginMult Dev Assembly Chgs 15/May/2019 Mult Dev 06/Dec/2019 Mult Dev Wafer Chgs 4/Oct/2019
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ