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- Transistors - Bipolar (BJT) - Single, Pre-Biased
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- DRDNB16W-7
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DRDNB16W-7 Технические параметры
Diodes Incorporated DRDNB16W-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ||
| Factory Lead Time | 19 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Number of Pins | 6Pins | |
| Weight | 6.010099mg | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 1 Element | |
| hFEMin | 56 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2008 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 50V | |
| Max Power Dissipation | 200mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 600mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | DRDNB16 | |
| Pin Count | 6 | |
| Max Output Current | 600mA | |
| Operating Supply Voltage | 50V | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Transistor Application | SWITCHING | |
| Transistor Type | NPN - Pre-Biased + Diode | |
| Collector Emitter Voltage (VCEO) | 300mV | |
| Max Collector Current | 600mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA 5V | |
| Current - Collector Cutoff (Max) | 500nA | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA | |
| Transition Frequency | 200MHz | |
| Max Breakdown Voltage | 50V | |
| Frequency - Transition | 200MHz | |
| Emitter Base Voltage (VEBO) | 5V | |
| Resistor - Base (R1) | 1 k Ω | |
| Continuous Collector Current | 600mA | |
| Resistor - Emitter Base (R2) | 10 k Ω | |
| Height | 1mm | |
| Length | 2.2mm | |
| Width | 1.35mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
DRDNB16W-7 Документы
- Environmental InformationDiodes RoHS 3 Cert
- DatasheetsDRDzzzzW DRDNB16W-7-Diodes-Inc.-datasheet-11856478.pdf DRDNB16W-7-Diodes-Inc.-datasheet-118438.pdf
- PCN Assembly/OriginMult Dev Wafer Source Chgs 9/Mar/2018
- PCN Design/SpecificationBond Wire 16/Sept/2008
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