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DSM80100M-7 Технические параметры

Diodes Incorporated  DSM80100M-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 21 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Collector-Emitter Saturation Voltage -250mV
Number of Elements 1 Element
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 600mW
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G6
Polarity PNP
Element Configuration Dual
Power - Max 600mW
Transistor Type PNP + Diode (Isolated)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -4V
Continuous Collector Current -500mA
Height 1.1mm
Length 3mm
Width 1.6mm
RoHS Status ROHS3 Compliant
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DSM80100M-7 Документы

DSM80100M-7 brand manufacturers: Diodes Incorporated, Anli stock, DSM80100M-7 reference price.Diodes Incorporated. DSM80100M-7 parameters, DSM80100M-7 Datasheet PDF and pin diagram description download.You can use the DSM80100M-7 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find DSM80100M-7 pin diagram and circuit diagram and usage method of function,DSM80100M-7 electronics tutorials.You can download from the Anli.