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DSS4160TQ-7 Технические параметры

Diodes Incorporated  DSS4160TQ-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 725mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G3
Configuration SINGLE
Power - Max 725mW
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 280mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 280mV @ 100mA, 1A
Transition Frequency 150MHz
Max Breakdown Voltage 60V
Frequency - Transition 150MHz
RoHS Status ROHS3 Compliant
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DSS4160TQ-7 Документы

DSS4160TQ-7 brand manufacturers: Diodes Incorporated, Anli stock, DSS4160TQ-7 reference price.Diodes Incorporated. DSS4160TQ-7 parameters, DSS4160TQ-7 Datasheet PDF and pin diagram description download.You can use the DSS4160TQ-7 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find DSS4160TQ-7 pin diagram and circuit diagram and usage method of function,DSS4160TQ-7 electronics tutorials.You can download from the Anli.