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DXTP3C100PD-13 Технические параметры

Diodes Incorporated  DXTP3C100PD-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PowerDI5060-8 (Type UXD)
Mfr Diodes Incorporated
Package Tape & Reel (TR)
Product Status Active
Current-Collector (Ic) (Max) 3A
Factory Pack QuantityFactory Pack Quantity 2500
Manufacturer Diodes Incorporated
Brand Diodes Incorporated
Series -
Свойство продукта Значение свойства
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Cut Tape
Subcategory Transistors
Power - Max 1.76W
Product Type BJTs - Bipolar Transistors
Transistor Type 2 PNP (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 170 @ 500mA, 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 325mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Frequency - Transition 100MHz
Product Category Bipolar Transistors - BJT
Просмотр сходства
DXTP3C100PD-13 brand manufacturers: Diodes Incorporated, Anli stock, DXTP3C100PD-13 reference price.Diodes Incorporated. DXTP3C100PD-13 parameters, DXTP3C100PD-13 Datasheet PDF and pin diagram description download.You can use the DXTP3C100PD-13 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find DXTP3C100PD-13 pin diagram and circuit diagram and usage method of function,DXTP3C100PD-13 electronics tutorials.You can download from the Anli.