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FMMTH10TA Технические параметры

Diodes Incorporated  FMMTH10TA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 7.994566mg
Collector-Emitter Breakdown Voltage 25V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 25V
Max Power Dissipation 330mW
Current Rating 25mA
Base Part Number FMMTH10
Свойство продукта Значение свойства
Element Configuration Single
Gain Bandwidth Product 650MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 25mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA 10V
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
Continuous Collector Current 25mA
Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 500MHz
Height 1mm
Length 3.05mm
Width 1.4mm
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free
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FMMTH10TA Документы

FMMTH10TA brand manufacturers: Diodes Incorporated, Anli stock, FMMTH10TA reference price.Diodes Incorporated. FMMTH10TA parameters, FMMTH10TA Datasheet PDF and pin diagram description download.You can use the FMMTH10TA Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find FMMTH10TA pin diagram and circuit diagram and usage method of function,FMMTH10TA electronics tutorials.You can download from the Anli.