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FZT655TC Технические параметры
Diodes Incorporated FZT655TC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Weight | 7.994566mg | |
| Collector-Emitter Breakdown Voltage | 150V | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Voltage - Rated DC | 150V | |
| Max Power Dissipation | 2W | |
| Current Rating | 1A | |
| Base Part Number | FZT655 | |
| Element Configuration | Single |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Gain Bandwidth Product | 30MHz | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 500mV | |
| Max Collector Current | 1A | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA 5V | |
| Current - Collector Cutoff (Max) | 100nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 1A | |
| Collector Base Voltage (VCBO) | 150V | |
| Emitter Base Voltage (VEBO) | 5V | |
| Continuous Collector Current | 1A | |
| Height | 1.65mm | |
| Length | 6.7mm | |
| Width | 3.7mm | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
FZT655TC Документы
- DatasheetsFZT655
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