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MMBT5401Q-7-F Технические параметры

Diodes Incorporated  MMBT5401Q-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23
Collector-Emitter Breakdown Voltage 150V
Current-Collector (Ic) (Max) 600mA
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Part Status Active
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 350mW
Power - Max 350mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 150V
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
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MMBT5401Q-7-F Документы

MMBT5401Q-7-F brand manufacturers: Diodes Incorporated, Anli stock, MMBT5401Q-7-F reference price.Diodes Incorporated. MMBT5401Q-7-F parameters, MMBT5401Q-7-F Datasheet PDF and pin diagram description download.You can use the MMBT5401Q-7-F Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MMBT5401Q-7-F pin diagram and circuit diagram and usage method of function,MMBT5401Q-7-F electronics tutorials.You can download from the Anli.