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MMBT5551-7 Технические параметры

Diodes Incorporated  MMBT5551-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 7.994566mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 160V
Number of Elements 1 Element
hFEMin 80
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2008
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 160V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Current Rating 200mA
Frequency 300MHz
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number MMBT5551
Pin Count 3
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 160V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Transition Frequency 100MHz
Max Breakdown Voltage 160V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 200mA
Height 1mm
Length 3.05mm
Width 1.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

MMBT5551-7 Документы

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