Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
MMBT5551Q-7 Технические параметры
Diodes Incorporated MMBT5551Q-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | SOT-23-3 | |
| Mfr | Diodes Incorporated | |
| Package | Tape & Reel (TR) | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 600 mA | |
| Transistor Polarity | NPN | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Manufacturer | Diodes Incorporated | |
| Brand | Diodes Incorporated | |
| Series | Automotive, AEC-Q101 | |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Packaging | MouseReel | |
| Subcategory | Transistors | |
| Power Dissipation | 300 | |
| Power - Max | 300 mW | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
| Current - Collector Cutoff (Max) | 50nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA | |
| Voltage - Collector Emitter Breakdown (Max) | 160 V | |
| Transition Frequency | 300 | |
| Frequency - Transition | 300MHz | |
| Continuous Collector Current | 600 | |
| Product Category | Bipolar Transistors - BJT |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ