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MMBTA56Q-13-F Технические параметры

Diodes Incorporated  MMBTA56Q-13-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Свойство продукта Значение свойства
Max Power Dissipation 310mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Configuration SINGLE
Power - Max 310mW
Transistor Application SWITCHING
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Transition Frequency 50MHz
Frequency - Transition 50MHz
RoHS Status ROHS3 Compliant
Просмотр сходства

MMBTA56Q-13-F Документы

MMBTA56Q-13-F brand manufacturers: Diodes Incorporated, Anli stock, MMBTA56Q-13-F reference price.Diodes Incorporated. MMBTA56Q-13-F parameters, MMBTA56Q-13-F Datasheet PDF and pin diagram description download.You can use the MMBTA56Q-13-F Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MMBTA56Q-13-F pin diagram and circuit diagram and usage method of function,MMBTA56Q-13-F electronics tutorials.You can download from the Anli.