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MMDT2227-7-F Технические параметры

Diodes Incorporated  MMDT2227-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Supplier Device Package SOT-363
Weight 6.010099mg
Collector-Emitter Breakdown Voltage 60V
Current-Collector (Ic) (Max) 600mA
Number of Elements 2 Elements
Turn Off Delay Time 285 ns
hFEMin 100
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 40V
Max Power Dissipation 200mW
Current Rating 600mA
Frequency 300MHz
Свойство продукта Значение свойства
Base Part Number MMDT2227
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 200mW
Turn On Delay Time 35 ns
Power - Max 200mW
Gain Bandwidth Product 300MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V 60V
Max Frequency 300MHz
Max Breakdown Voltage 60V
Frequency - Transition 300MHz 200MHz
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 600mA
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMDT2227-7-F Документы

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