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MMDT3904V-7 Технические параметры

Diodes Incorporated  MMDT3904V-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6Pins
Weight 3.005049mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Number of Elements 2 Elements
hFEMin 100
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 40V
Max Power Dissipation 200mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Свойство продукта Значение свойства
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMDT3904V
Pin Count 6
Polarity NPN
Element Configuration Dual
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 200mA
Turn On Time-Max (ton) 70ns
Height 600μm
Length 1.6mm
Width 1.2mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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