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MMDT3906V-7 Технические параметры

Diodes Incorporated  MMDT3906V-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6Pins
Weight 3.005049mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Number of Elements 2 Elements
hFEMin 60
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 150mW
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Frequency 250MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 6
Polarity PNP
Element Configuration Dual
Power Dissipation 150mW
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
Turn Off Time-Max (toff) 300ns
Turn On Time-Max (ton) 70ns
Height 600μm
Length 1.6mm
Width 1.2mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
Lead Free Lead Free

MMDT3906V-7 Документы

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