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MMDT3946FL3-7 Технические параметры

Diodes Incorporated  MMDT3946FL3-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-XFDFN Exposed Pad
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 40V
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Max Power Dissipation 370mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
Configuration SEPARATE, 2 ELEMENTS
Case Connection COLLECTOR
Power - Max 370mW
Transistor Application SWITCHING
Polarity/Channel Type NPN AND PNP
Transistor Type NPN, PNP Complementary
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Transition Frequency 300MHz
Max Breakdown Voltage 40V
Frequency - Transition 300MHz
Turn Off Time-Max (toff) 250ns
Turn On Time-Max (ton) 70ns
RoHS Status ROHS3 Compliant

MMDT3946FL3-7 Документы

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