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MMDT4146-7-F Технические параметры

Diodes Incorporated  MMDT4146-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Weight 6.010099mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 25V
Number of Elements 2 Elements
Operating Temperature (Max.) 150°C
hFEMin 120
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 40V
Max Power Dissipation 200mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Свойство продукта Значение свойства
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMDT4146
Pin Count 6
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Transition Frequency 300MHz
Max Breakdown Voltage 25V
Frequency - Transition 300MHz 250MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMDT4146-7-F Документы

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