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MMDT5401-7-F Технические параметры

Diodes Incorporated  MMDT5401-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Weight 6.010099mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage -150V
Current-Collector (Ic) (Max) 200mA
Number of Elements 2 Elements
hFEMin 50
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
ECCN Code EAR99
Voltage - Rated DC -150V
Max Power Dissipation 200mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -200mA
Свойство продукта Значение свойства
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMDT5401
Pin Count 6
Polarity PNP
Element Configuration Dual
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) -150V
Max Collector Current -200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Transition Frequency 100MHz
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) -160V
Emitter Base Voltage (VEBO) -6V
Max Junction Temperature (Tj) 150°C
Continuous Collector Current -200mA
Height 1.1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

MMDT5401-7-F Документы

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