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MMDT5451Q-7 Технические параметры

Diodes Incorporated  MMDT5451Q-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Mfr Diodes Incorporated
Package Tape & Reel (TR)
Product Status Active
Current-Collector (Ic) (Max) 200mA
Brand Diodes Incorporated
Manufacturer Diodes Incorporated
Factory Pack QuantityFactory Pack Quantity 3000
Emitter- Base Voltage VEBO 6 V
Pd - Power Dissipation 320 mW
Transistor Polarity NPN, PNP
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 80
Collector-Emitter Saturation Voltage 200 mV, 500 mV
Свойство продукта Значение свойства
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 300 MHz
Maximum DC Collector Current 200 mA
Collector- Emitter Voltage VCEO Max 160 V, 150 V
Series Automotive, AEC-Q101
Operating Temperature -55°C ~ 150°C (TJ)
Configuration Dual
Power - Max 200mW
Transistor Type NPN, PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V / 60 @ 10mA, 5V
Current - Collector Cutoff (Max) 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 160V, 150V
Frequency - Transition 300MHz
Collector Base Voltage (VCBO) 180 V, 160 V
Product Category Diodes Inc.
Просмотр сходства
MMDT5451Q-7 brand manufacturers: Diodes Incorporated, Anli stock, MMDT5451Q-7 reference price.Diodes Incorporated. MMDT5451Q-7 parameters, MMDT5451Q-7 Datasheet PDF and pin diagram description download.You can use the MMDT5451Q-7 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find MMDT5451Q-7 pin diagram and circuit diagram and usage method of function,MMDT5451Q-7 electronics tutorials.You can download from the Anli.