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SBR20A100CTE Технические параметры

Diodes Incorporated  SBR20A100CTE technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка
Factory Lead Time 5 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Weight 2.084002g
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tube
Series SBR®
Published 2010
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Solder
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Applications GENERAL PURPOSE
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-T3
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Super Barrier
Current - Reverse Leakage @ Vr 100μA @ 100V
Voltage - Forward (Vf) (Max) @ If 750mV @ 10A
Forward Current 20A
Operating Temperature - Junction -65°C~175°C
Forward Voltage 750mV
Max Reverse Voltage (DC) 100V
Average Rectified Current 10A
Number of Phases 1Phase
Peak Reverse Current 100μA
Max Repetitive Reverse Voltage (Vrrm) 100V
Peak Non-Repetitive Surge Current 250A
Diode Configuration 1 Pair Common Cathode
Reverse Voltage (DC) 100V
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

SBR20A100CTE Документы

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