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ZDT1053TA Технические параметры

Diodes Incorporated  ZDT1053TA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Gull Wing
Number of Pins 8Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 75V
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 75V
Max Power Dissipation 2.75W
Peak Reflow Temperature (Cel) 260
Current Rating 5A
Frequency 140MHz
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number ZDT1053
JESD-30 Code R-PDSO-G10
Polarity NPN
Element Configuration Dual
Power Dissipation 2.75W
Transistor Application SWITCHING
Gain Bandwidth Product 140MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 75V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 2V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 440mV @ 250mA, 5A
Transition Frequency 140MHz
Max Breakdown Voltage 75V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 5A
Height 1.6mm
Length 6.7mm
Width 3.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

ZDT1053TA Документы

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