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ZDT605TC Технические параметры

Diodes Incorporated  ZDT605TC technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Mounting Type Surface Mount
Package / Case 8-SMD, Gull Wing
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 1A
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZDT605
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Configuration 2 BANKS, DARLINGTON
Power - Max 2.75W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type 2 NPN Darlington (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 1A 5V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1mA, 1A
Voltage - Collector Emitter Breakdown (Max) 120V
Transition Frequency 150MHz
Frequency - Transition 150MHz

ZDT605TC Документы

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